Vapor phase epitaxy is relatively simple, often again after the epitaxial growth is a diffusion method for production of a PN junction, so the efficiency is low. Liquid phase epitaxy growth of a furnace 60-100 sheet, high production efficiency, cost reused by Jia also has a very low drop, can be used to manufacture high-brightness GaP green light-emitting device and the general brightness of the GaP red light emitting device, it can be used to make ultra-high-brightness light-emitting devices. Metal organic chemical vapor deposition () is the production of ultra-high brightness blue and green LED and red, yellow LED, It can precisely control the thickness --- the thickness of the growth can be controlled to about 20A, and precision control epitaxial the composition of the layer.

This method to grow a period of about 20 layers of high brightness LED structure quantum well strata and the DBR structure kinds, also suitable for mass production, the main method for the production of high brightness LED. Molecular beam epitaxy is currently mainly used for the development of ZnSe white light emitting diode, the effect is very good, capable of growing epitaxial layer is less than 10A, determine whether the slower growth of the number of degrees, about 1 micron per hour, the loading capacity is quite small, low production efficiency .